Product Summary

The mg150j1bs11 is a Toshiba GTR module silicon N channel IGBT. Applications of the mg150j1bs11 include: high power switching and motor control.

Parametrics

mg150j1bs11 absolute maximum ratings: (1) collector-emitter voltage VCES: 600V; (2) gate-emitter voltage VGES: ±20V; (3) collector current IC: 150A (DC) , ICP: 300A (1ms) ; (4) collector power dissipation PC: 450W; (5) junction temperature Tj: 150°C; (6) storage temperature range Tstg: -40 to 125°C; (7) isolation voltage VIsol: 2500V (AC 1 mintue) .

Features

mg150j1bs11 features: (1) high input impedance; (2) high speed: tf=1.0μs (Max.) (IC=150A) ; (3) low saturation voltage: VCE (sat)=2.7V (Max.) (IC=150A); (4) enchancement-mode; 95) the electrodes are isolated from case.

Diagrams

MG150J1BS11 Equivalent Circuit