Product Summary
The SKP10N60A is fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode.
Parametrics
SKP10N60A absolute maximum ratings: (1) Collector-emitter voltage VCE: 600V; (2) DC collector current, Ic:20A (Tc=25°C) , 10.6A (Tc=100°C) ; (3) Pulsed collector current, tp limited by Tjmax, ICpuls: 40A; (4) Turn off safe operating area Vce≤6000V, Tj≤150°C, : 40A; (5) Diode forward current Tc=25°C: 21A, Tc=100°C; (6) Diode pulsed current,tp limited by Tjmax, IFpuls: 42V; (7) Gate-emitter voltage, VGE: ±20V; (8) Short circuit withstand time VGE=15V, Vcc≤600V, Tj≤150°C, tsc: 10μs; (9) Power dissipation, Tc=25°C, Ptot: 92W; (10) Operating junction and storage temperature: -55 to +150°C.
Features
SKP10N60A features: (1) 75% lower Eoff compared to previous generation combined with low conduction losses; (2) Short circuit withstand time: 10μs; (3) Very soft, fast recovery anti-parallel EmCon diode; (4) Complete product spectrum and PSpice Models; (5) NPT-Technology for 600V applications offers.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SKP10N60A |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 10A |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
SKP10N60 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
SKP10N60A |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 10A |
Data Sheet |
|
|
|||||||||||||
SKP15N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 15A |
Data Sheet |
|
|
|||||||||||||
SKP16C26A |
DEV EVALUATION KIT M16C/26A |
Data Sheet |
Negotiable |
|
||||||||||||||
SKP16CMINI28 |
DEV EVALUATION KIT SKP16CMINI28 |
Data Sheet |
Negotiable |
|