Product Summary

The SKP10N60A is fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode.

Parametrics

SKP10N60A absolute maximum ratings: (1) Collector-emitter voltage VCE: 600V; (2) DC collector current, Ic:20A (Tc=25°C) , 10.6A (Tc=100°C) ; (3) Pulsed collector current, tp limited by Tjmax, ICpuls: 40A; (4) Turn off safe operating area Vce≤6000V, Tj≤150°C, : 40A; (5) Diode forward current Tc=25°C: 21A, Tc=100°C; (6) Diode pulsed current,tp limited by Tjmax, IFpuls: 42V; (7) Gate-emitter voltage, VGE: ±20V; (8) Short circuit withstand time VGE=15V, Vcc≤600V, Tj≤150°C, tsc: 10μs; (9) Power dissipation, Tc=25°C, Ptot: 92W; (10) Operating junction and storage temperature: -55 to +150°C.

Features

SKP10N60A features: (1) 75% lower Eoff compared to previous generation combined with low conduction losses; (2) Short circuit withstand time: 10μs; (3) Very soft, fast recovery anti-parallel EmCon diode; (4) Complete product spectrum and PSpice Models; (5) NPT-Technology for 600V applications offers.

Diagrams

SKP10N60A Circuit

Image Part No Mfg Description Data Sheet Download Pricing
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SKP10N60A
SKP10N60A

Infineon Technologies

IGBT Transistors FAST IGBT NPT TECH 600V 10A

Data Sheet

0-1: $1.80
1-10: $1.54
10-100: $1.16
100-500: $0.90
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SKP10N60
SKP10N60

Other


Data Sheet

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SKP10N60A
SKP10N60A

Infineon Technologies

IGBT Transistors FAST IGBT NPT TECH 600V 10A

Data Sheet

0-1: $1.80
1-10: $1.54
10-100: $1.16
100-500: $0.90
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Data Sheet

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245-500: $1.31
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1000-2000: $1.05
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