Product Summary
The IRL1404ZS is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRL1404ZS well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1404ZS provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The device is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Parametrics
IRL1404ZS absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 160 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 110 A; (3)IDM Pulsed Drain Current: 640 A; (4)PD @TA = 25℃ Power Dissipation: 3.8 W; (5)PD @TC = 25℃ Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS Gate-to-Source Voltage: ±20 V; (8)EAS Single Pulse Avalanche Energy: 520 mJ; (9)IAR Avalanche Current: 95 A; (10)EAR Repetitive Avalanche Energy: 20 mJ; (11)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175 ℃.
Features
IRL1404ZS features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRL1404ZS |
MOSFET N-CH 40V 75A D2PAK |
Data Sheet |
Negotiable |
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IRL1404ZSPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRL1404ZSTRLPBF |
International Rectifier |
MOSFET MOSFT 40V 200A 3.1mOhm 75nC Log Lvl |
Data Sheet |
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IRL1404ZSTRL |
MOSFET N-CH 40V 75A D2PAK |
Data Sheet |
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