Product Summary

The IRFP064NPBF is a Fifth Generation HEXFET from International Rectifier. The IRFP064NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFP064NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of T0-220 device. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Parametrics

IRFP064NPBF absolute maximum ratings: (1)Continuous drain current, VGS at 10V, ID at TC = 25℃: 110A; (2)Continuous drain current, VGS at 10V, ID at TC= 100℃: 80A; (3)Pulsed drain current, IDM: 390A; (4)Power dissipation, PD at TC= 25℃: 200W; (5)Linear derating factor: 1.3W/℃; (6)Gate-to-source voltage, VGS: ±20V; (7)Single pulse avanlanche energy, EAS: 480mJ; (8)Avalanche current, IAR: 59A; (9)Repetitve avalanche energy, EAR: 20mJ; (10)Peak diode recovery dv/dt, dv/dt: 5.0V/ns; (11)Operating junction and storage temperature range, TSTG: -55 to +175 ℃; (12)Soldering temperature, for 10 seconds: 300(1.6mm from case)℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRFP064NPBF features: (1)Advanced process technology; (2)Ultra low on-resistance; (3)Dynamic dv/dt rating; (4)175℃ operating temperature; (5)Fast switching; (6)Fully avalanche rated; (7)Lead-free.

Diagrams

IRFP064NPBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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