Product Summary

The mg75q2ys50 is a Toshiba GTR module silicon N channel IGBT. Applications of the mg75q2ys50 include: high power switching and motor control.

Parametrics

mg75q2ys50 absolute maximum ratings: (1) collector-emitter voltge VCES: 1200V; (2) Gate-collector voltage VGES: ±20V; (3) Collector current, DC: 100/75A (IC 25/80°C) , 1ms: 200/150A (ICP 25/80°C) ; (4) forward current IF: 75A (DC) , IFM: 150A (1ms) ; (5) collector power dissipation (Tc=25°C) PC: 600W; (6) Junction temperature Tj: 150°C; (7) sotrage temperature Tstg: -40 to +125°C; (8) Isolation voltage VIsol: 2500V (AC 1 minute) .

Features

mg75q2ys50 features: (1) high input impedance; (2) high speed:tf=0.3μs (Max.) @Inductive load; (3) low saturation voltage: VCE (sat) =3.6V (Max.) ; (4) enchancement-mode; (5) includes a complete half bridge in one package; (6) the electrodes are isolated from case.

Diagrams

mg75q2ys50 Euqivalent Circuit