Product Summary

The fp25r12kt3 is an IGBT module.

Parametrics

fp25r12kt3 absolute maximum ratings: (1) collector-emitter voltage VCES: 1200V (Tvj=25°C) ; (2) DC-collector current IC nom: 40A (Tc=25°C) ; (3) repetitive collector current ICRM: 50A (tp=1ms, Tc=80°C) ; (4) total power dissipation Ptot: 155W (Tc=25°C) ; (5) gate-emitter peak voltage VGES: ±20V.

Features

fp25r12kt3 features: (1) collector-emitter saturation voltage VCE sat: 170 to 215V (IC=25A, VGE=15V, Tvj=125°C) ; (2) gate thresold voltage VGEth: 50 to 65V (Ic=100mA, VCE=VGE, Tvj=25°C) ; (3) internal gate resistor RGint: 8Ω (Tvj=25°C) ; (4) collector-emitter cut-off current ICES: 50mA (VCE=1200V, VGE=0V, Tvj=25°C) ; (5) gate-emitter leakage current IGES: 400nA (VCE=0V, VGE=20V, Tvj=25°C) .

Diagrams

fp25r12kt3 Circuit Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FP25R12KT3
FP25R12KT3

Infineon Technologies

IGBT Modules N-CH 1.2KV 40A

Data Sheet

0-1: $50.31
1-10: $45.68
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FP250
FP250

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Data Sheet

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Infineon Technologies

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Data Sheet

0-1: $50.31
1-10: $45.68
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Data Sheet

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1-10: $42.00
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