Product Summary
The ff200r17ke3 is a 62mm C-series module with trench/fieldstop IGBT and EmCon diode.
Parametrics
ff200r17ke3 absolute maximum ratings: (1) collector-emitter voltage VCES: 1700V (Tvj=25°C) ; (2) DC-collector current IC nom: 390A (Tc=25°C) ; (3) repetitive collector current ICRM: 400A (tp=1ms, Tc=80°C) ; (4) total power dissipation Ptot: 1250W (Tc=25°C, Transistor) ; (5) gate-emitter peak voltage VGES: ±20V; (6) DC forward current IF: 200A; (7) repetitive peak forw. current IFRM: 400A; (8) insulation test voltage Visol: 3.4kV (RMS, f=50Hz, t=1 min.) .
Features
ff200r17ke3 features: (1) collector-emitter saturation voltage VCE sat: 2 to 2.45V (IC=200A, VGE=15V, Tvj=25°C) , 2.4V (IC=200A, VGE=15V, Tvj=125°C) ; (2) gate thresold voltage VGEtn: 5.2 to 6.4V (Ic=8mA, VCE=VGE, Tvj=25°C) ; (3) input capacitance Cies: 17nF (f=1MHZ, Tvj=25°C, VCE=25V, VGE=0V) ; (4) collector-emitter cut-off current VCE=1700V, VGE=0V, Tvj=125°C, ICES: 5mA; (5) gate-emitter leakage current VCE=0V, VGE=20V, Tvj=25°C, IGES: 400nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R17KE3 |
Infineon Technologies |
IGBT Modules N-CH 1.7KV 390A |
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FF200R17KE3_S4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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