Product Summary

The IRF450 is an n-channel power mosfet.

Parametrics

IRF450 absolute maximum ratings: (1) drain-source voltage, VDDS: 500Vdc; (2) Drain-gate voltage (RGS=1.0MΩ) ; (3) Gate-source voltage VGS: ±20Vds; (4) Continuous Drain Current Tc=25°C, ID: 13A; (5) Continuous Drain Current Tc=100°C, ID: 8A; (6) Drain Current-Pulsed IDM: 52A; (7) Gate Current-Pulsed IGM: ±1.5A; (8) Operating and storage junction temperature temperature range: -55 to 150°C; (9) Maximum lead temp. for soldering purpose, 1/8 inch from case for 5 seconds: 300°C.

Features

IRF450 features: (1) low RDS (on) at high voltage; (2) Improved inductive ruggedness; (3) excellent high voltage stability; (4) fast swithing times; (5) rugged polysilicon gate cell structure; (6) low input capacitance; (7) extended safe operating area; (8) improved high temperature reliability; (9) TO-3 package (high voltage) .

Diagrams

IRF450 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF450
IRF450

MOSFET N-CH 500V 12A TO-3-3
Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF400
IRF400
Other

Data Sheet
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IRF4000
IRF4000
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Data Sheet
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IRF4104
IRF4104

MOSFET N-CH 40V 75A TO-220AB
Data Sheet
0-250: $1.10
IRF4104GPBF
IRF4104GPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.82
1-25: $1.18
25-100: $0.85
100-250: $0.80
IRF4104L
IRF4104L

MOSFET N-CH 40V 75A TO-262
Data Sheet
Negotiable 
IRF4104LPBF
IRF4104LPBF

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Data Sheet
0-300: $0.87