Product Summary

The IRF450 is an n-channel power mosfet.

Parametrics

IRF450 absolute maximum ratings: (1) drain-source voltage, VDDS: 500Vdc; (2) Drain-gate voltage (RGS=1.0MΩ) ; (3) Gate-source voltage VGS: ±20Vds; (4) Continuous Drain Current Tc=25°C, ID: 13A; (5) Continuous Drain Current Tc=100°C, ID: 8A; (6) Drain Current-Pulsed IDM: 52A; (7) Gate Current-Pulsed IGM: ±1.5A; (8) Operating and storage junction temperature temperature range: -55 to 150°C; (9) Maximum lead temp. for soldering purpose, 1/8 inch from case for 5 seconds: 300°C.

Features

IRF450 features: (1) low RDS (on) at high voltage; (2) Improved inductive ruggedness; (3) excellent high voltage stability; (4) fast swithing times; (5) rugged polysilicon gate cell structure; (6) low input capacitance; (7) extended safe operating area; (8) improved high temperature reliability; (9) TO-3 package (high voltage) .

Diagrams

IRF450 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
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IRF450
IRF450


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Data Sheet

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Data Sheet

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