Product Summary
The ff200r06me3 is an EconoDUAL Module with Trench/Feldstopp IGBT3 and Emitter Controlled 3 Diode and NTC. Applications of the ff200r06me3 include: high power converters, motor drives and UPS systems.
Parametrics
ff200r06me3 absolute maximum ratings: (1) collect-emitter voltage VCES: 600V (Tvj=25°C) ; (2) DC-collector current IC: 260A (Tc=25°C, Tvj=175°C) ; (3) repetitive peak collector current ICRM: 400A (tp=1ms) ; (4) total power dissipation Ptot: 680W (Tc=25°C, Tvj=175°C) ; (5) gate-emitter peak voltage VGES: ±20V.
Features
ff200r06me3 features: (1) low switching losses; (2) VCEsat with positive temperature coefficient; (4) low VCEsat; (5)package with CTI>200; (6) isolated base plate; (7) standard housing.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R06ME3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
FF200R06KE3 |
Infineon Technologies |
IGBT Modules N-CH 600V 260A |
Data Sheet |
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FF200R06ME3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3ENG |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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