Product Summary
The bsm75gb120dlc is an IGBT module.
Parametrics
bsm75gb120dlc absolute maximum ratings: (1) collector-emitter voltage VRRM: 1200V; (2) DC-collector current Tc=80°C, IC.nom: 100A, Tc=25°C, Ic: 170A; (3) repetitive peak collector current tp=1ms, Tc=80°C, ICRM: 150A; (4) total power dissipation Tc=25°C, Ptot: 690W; (5) gate-emitter peak voltage VGES: ±20V; (6) DC forward current Tc=70°C, IF: 75A; (7) repetitive peak forw. current IFRM: 150A; (8) repetitive peak collector current RMS, f=50Hz, t=1min. Visol: 2.5kV.
Features
bsm75gb120dlc features: (1) collector-emitter saturation voltage IC=100A, VGE=15V, Tvj=125°C: 24V to 29V; (2) gate threshold voltage IC=4mA, VCE=VGE, Tvj=25°C, VGE (th) : 45 to 65V; (3) input capacitance f=1MHz, Tvj=25°C, VC=25V, VGE=0V Cies: 51nF; (4) collector-emitter cut-off current VCE=1200V, VGE=0V, Tvj=125°C, ICES: 300μA; (5) gate-emitter leakage current VCE=0V, VGE=20V, Tvj=25°C, IGES: 400nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM75GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 75A DUAL |
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