(China (Mainland))
Product Summary
The bsm100gp60 is an IGBT module.
Parametrics
bsm100gp60 absolute maximum ratings: (1) repetitive peak reverse voltage VRRM: 1600V; (2) RMS forward current per chip IFRMSM: 80A; (3) DC forward current Id: 100A (Tc=80°C) ; (4) surge forward current tp=10ms, Tvj=150°C: 570A; (5) total power dissipation Tc=25°C, Ptot: 420W; (6) gate-emitter peak voltage VGES: ±20V; (7) DC forward current Tc=70°C, IF: 100A; (8) gate-emitter peak voltage VGES: ±20V; (9) DC forward current Tc=70°C, IF: 30A; (10) repetitive peak forw. current tp=1ms, IFRM: 60A.
Features
bsm100gp60 features: (1) forward voltage Tvj=150°C, IF=100A, VF: 1.16V; (2) threshold voltage Tvj=150°C, V (TO) : 0.8V; (3) slope resistance Tvj=150°C, IT: 4.8Ω; (4) reverse current Tvj=150°C, VR=1600V, IR: 4mA; (5) lead resistance, terminals-chip RAA+CC: 4mΩ; (6) collector-emitter saturation voltage VGE=15V, Tvj=125°C, Ic=100A, VCE sat: 2.2V.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSM100GP60 |
Infineon Technologies |
IGBT Modules 600V 100A PIM |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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