(China (Mainland))
Product Summary
The bsm100gb120dlck is an IGBT module.
Parametrics
bsm100gb120dlck absolute maximum ratings: (1) repetitive peak reverse voltage VRRM: 1200V; (2) DC-collector current Tc=80°C, IC.nom: 100A, Tc=25°C, Ic: 205A; (3) repetitive peak collector current tp=1ms, Tc=80°C, ICRM: 200A; (4) total power dissipation Tc=25°C, Ptot: 830W; (5) gate-emitter peak voltage VGES: ±20V; (6) DC forward current Tc=70°C, IF: 100A; (7) repetitive peak forw. current IFRM: 200A; (8) repetitive peak collector current RMS, f=50Hz, t=1min. Visol: 2.5kV.
Features
bsm100gb120dlck features: (1) collector-emitter saturation voltage IC=100A, VGE=15V, Tvj=125°C: 2.4V; (2) gate threshold voltage IC=4mA, VCE=VGE, Tvj=25°C, VGE (th) : 4.5 to 6.5V; (3) input capacitance f=1MHz, Tvj=25°C, VC=25V, VGE=0V Cies: 6.5nF; (4) collector-emitter cut-off current VCE=1200V, VGE=0V, Tvj=125°C, ICES: 500μA; (5) gate-emitter leakage current VCE=0V, VGE=20V, Tvj=25°C, IGES: 400nA.
Diagrams
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 BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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