(China (Mainland))
Product Summary
The 2MBI200U4B-120 is an IGBT modue.
Parametrics
2MBI200U4B-120 absolute maximum ratings: (1)Collector-Emitter Voltage: 1200V; (2)Gate -Emitter Voltage: ± 20V; (3)Collector Power Dissipation: 1040W; (4)Collector Current-IC: 300A; (5)Collector Current-IC PULSE: 600A; (6)Junction Temperature: +150℃; (7)Storage Temperature: -40 ~ +125℃; (8)Isolation Voltage: 2500 V; (9)Mounting Screw Torque: 3.5 Nm.
Features
2MBI200U4B-120 features: (1)zero gate voltage collector current: 2.0mA; (2)gate-emitter leakage current: 400nA; (3)gate-emitter threshold voltage: 4.5 to 8.5V; (4)reverse recovery time: 0.35us.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2MBI200U4B-120 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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