Product Summary

The 2MBI150U4A-120-50 is an IGBT module.

Parametrics

2MBI150U4A-120-50 absolute maximum ratings: (1)Storage temperature, Tj: 150℃; (2)Junction temperature, Tstg: -40 to 125℃; (3)Isolation voltage, Visol: 2500V; (4)Collector Power Dissipation, 1 device, Pc: 735W; (5)Collector current, IC: 200A; ICP: 400A; (6)Collector-Emitter voltage, Vces: 1200V; (7)Gate-Emitter voltage, Vges: ±20V.

Features

2MBI150U4A-120-50 features: (1)Zero gate voltage collector current, ICES: 1.0mA; (2)Gate-Emitter leakage current, IGES: 200nA; (3)Gate-Emitter threshold voltage, VGE: 4.5 to 8.5V; (4)Collector-Emitter saturation voltage, VCE(terminal): 2.15 to 2.30V; VCE(chip): 1.9 to 2.05V.

Diagrams

2MBI150U4A-120-50 block diagram