Product Summary

The W15NB50 is an N-channel Powermesh mosfet. The W15NB50 uses the latest high voltage MESH OVERLAY process, SGS-Thomson. Applications of the W15NB50 include: high current, high speed swithcing, switching mode power supplies, DC-AC conveters for wedding, equipment and uninterruptible power supplies and motor drive.

Parametrics

W15NB50 absolute maximum ratings: (1) Drain-source Voltage (VGS=0) VDS: 500V; (2) Drain-gateVoltage(RGS=20kΩ) VDGR: 500V; (3) Gate-source Voltage VGS: ±30V; (4) Drain Current (continuous) Tc=25°C, ID: 14.6A; (5) Drain Current(continuous) at Tc=100°C: 9.2A; (6) Drain Current(pulsed) : 58.4A; (7) Total Dissipation at Tc=25°C, Ptot: 190A; (8) Derating Factor: 0.64w/°C; (9) Peak Diode Recovery voltage slope: 4V/ns; (10) Insulation With stand Voltage (DC) VISO: 4000V; (11) Storage Temperature Tstg: -65 to 150°C; (12) Max. Operating Junction Temperature Tj: 150°C.

Features

W15NB50 features: (1) typical RDS (on) =0.33Ω; (2) extremely high dv/dt capability; (3) ±30V gate to source voltage ratings; (4) 100% avalanche tested; (5) very low intrinsic capacitances; (5) gate charge minimized.

Diagrams

W15NB50 Circuit