(China (Mainland))
Product Summary
The flm0910-8f is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. The stringent Quality Assurance Program of the flm0910-8f assures the highest reliability and consistent performance.
Parametrics
flm0910-8f absolute maximum ratings: (1) Drain-Source Voltage VDS: 15V; (2) Gate-Source Voltage VGS: -5V; (3) Total Power Dissipation PT: 42.8W (Tc=25°C) ; (4) Storage Temperature Tstg: -65 to +175°C: (5) Channel Temperature Tch: 175°C.
Features
flm0910-8f features: (1) High Output Power:P1dB=39.0dBm (Typ.) ; (2) High Gain: G1dB=7.5dB (Typ.) ; (3) High PAE: add=29% (Typ.) ; (4) Low IM3= -46dBc@Po=28.5dBm; (5) Broad Band:9.5 ~ 10.5GHz; (6) Impedance Matched Zin/Zout=50Ω.
Diagrams
